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| Supertex inc. VP0104/VP0106/VP0109 P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS -40V -60V -90V RDS(ON) (max) 8.0 8.0 8.0 ID(ON) (min) -0.5A -0.5A -0.5A Order Number / Package TO-92 VP0104N3 VP0106N3 VP0109N3 Features Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds Excellent thermal stability Integral Source-Drain diode High input impedance and high gain Complementary N- and P-channel devices Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. Supertex's vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Applications Motor controls Converters Amplifiers Switches Power supply circuits Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) Package Option Absolute Maximum Ratings Drain-to-Source Voltage Drain-to-Gate Voltage Gate-to-Source Voltage Operating and Storage Temperature Soldering Temperature* * Distance of 1.6 mm from case for 10 seconds. o SGD BVDSS BVDGS 20V TO-92 Note: See Package Outline section for dimensions. -55 C to +150o C 300o C Supertex inc. * 1235 Bordeaux Drive, Sunnyvale, CA 94089 * Tel: (408) 222-8888 * FAX: (408) 222-4895 * www.supertex.com 1 VP0104/VP0106/VP0109 Thermal Characteristics Package TO-92 ID (continuous)* -0.25A ID (pulsed) -0.8A Power Dissipation @ TC = 25o C 1.0W jc o C/W 125 ja o C/W 170 IDR* -0.25A IDRM -0.8A * ID (continuous) is limited by max rated Tj. Electrical Characteristics (@ 25oC unless otherwise specified) Symbol BVDSS Drain-to-Source Breakdown Voltage VGS(th) V GS(th) IGSS IDSS Gate Threshold Voltage Change in VGS(th) with Temperature Gate Body Leakage Zero Gate Voltage Drain Current Parameter VP0109 VP0106 VP0104 Min -90 -60 -40 -1.5 5.8 -1.0 -3.5 6.5 -100 -10 -1 ID(ON) RDS(ON) RDS(ON) GFS CISS COSS CRSS td(ON) tr td(OFF) tf VSD trr ON-State Drain Current Static Drain-to-Source ON-State Resistance Change in RDS(ON) with Temperature Forward Transconductance Input Capacitance Common Source Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Diode Forward Voltage Drop Reverse Recovery Time 150 -0.15 -0.50 -0.25 -1.2 11 6.0 0.55 190 45 22 3 4 3 8 4 -1.2 400 60 30 8 6 10 12 10 -2.0 V ns ns VDD = -25V ID = -0.5A RGEN = 25 ISD = -1.0A, VGS = 0V ISD = -1.0A, VGS = 0V pF 15 8.0 1.0 %/ oC m V mV/ C nA A mA A o Typ Max Unit Conditions V ID = -1.0mA, VGS = 0V VGS = VDS, ID = -1.0mA ID = -1.0mA, VGS = VDS VGS = 20V, VDS = 0V VGS = 0V, VDS = Max Rating VGS = 0V, VDS = 0.8 Max Rating TA = 125 oC VGS = -5V, VDS = -25V VGS = -10V, VDS = -25V VGS = -5V, ID = -0.1A VGS = -10V, ID = -0.5A VGS = -10V, ID = -0.5A VDS = -25V, ID = -0.5A VGS = 0V, VDS = -25V f = 1 MHz Notes: 1. All D.C. parameters 100% tested at 25oC unless otherwise stated. (Pulse test: 300 s pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit 0V 10% INPUT -10V PULSE GENERATOR 90% t(ON) Rgen t(OFF) tr td(OFF) tF INPUT td(ON) 0V 90% OUTPUT VDD 90% 10% 10% 2 D.U.T. OUTPUT RL VDD VP0104/VP0106/VP0109 Typical Performance Curves Output Characteristics -2.0 -1.0 VGS = -10V -1.6 VGS = -10V -1.2 -0.8 Saturation Characteristics ID (amperes) ID (amperes) -0.6 -8V -0.8 -8V -0.4 -6V -0.4 -6V -0.2 -4V 0 0 -10 -20 -30 -40 -50 0 0 -2 -4 -6 -4V -8 -10 VDS (volts) Transconductance vs. Drain Current 250 2.0 VDS (volts) Power Dissipation vs. Case Temperature VDS = -25V 200 TA= -55C TA = 25C TA = 125C GFS (millisiemens) PD (watts) 150 TO-92 1.0 100 50 0 0 -0.2 -0.4 -0.6 -0.8 -1.0 0 0 25 50 75 100 125 150 ID (amperes) Maximum Rated Safe Operating Area -10 1.0 TC (C) Thermal Response Characteristics Thermal Resistance (normalized) 0.8 ID (amperes) -1.0 0.6 TO-92(DC) -0.1 0.4 0.2 TO-92 P D = 1W T C = 25C 0.01 0.1 1 10 T C = 25C -0.01 -0.1 -1.0 -10 -100 0 0.001 VDS (volts) tp (seconds) 3 VP0104/VP0106/VP0109 Typical Performance Curves BVDSS Variation with Temperature 1.10 50 On-Resistance vs. Drain Current 1.06 40 VGS = -5V VGS = -10V BVDSS (normalized) RDS(ON) (ohms) 1.02 30 0.98 20 0.94 10 0.90 -50 0 50 100 150 0 0 -0.3 -0.6 -0.9 -1.2 -1.5 Tj (oC) Transfer Characteristics -1.0 ID (amperes) V(th) and RDS Variation with Temperature 1.6 1.6 TA = -55 C -0.8 o VDS = -25V VGS(th) (normalized) RDS(ON) @ -5V, 0.1A 1.2 1.4 -0.6 V(th) @ -1.0mA 1.0 1.2 -0.4 TA = 125oC 1.0 0.8 0.8 -0.2 0 0 -2 -4 -6 -8 -10 0.6 -50 0 50 100 150 VGS (volts) Capacitance vs. Drain-to-Source Voltage 100 -10 Tj (oC) Gate Drive Dynamic Characteristics f = 1MHz -8 75 VDS = -10V C (picofarads) 70 pF VGS (volts) VDS = -40V 70 pF -6 50 CISS COSS -4 25 -2 CRSS 0 0 -10 -20 -30 -40 0 0 45pF 0.2 0.4 0.6 0.8 1.0 VDS (volts) QG (nanocoulombs) Supertex inc. does not recommend the use of its products in life support applications, and will not knowingly sell its products for use in such applications, unless it receives an adequate "product liability indemnification insurance agreement". Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the Supertex website: http//www.supertex.com. (c)2006 Supertex inc. All rights reserved. Unauthorized use or reproduction is prohibited. Supertex inc. 1235 Bordeaux Drive, Sunnyvale, CA 94089 TEL: (408) 222-8888 / FAX: (408) 222-4895 Doc.# DSFP/VP0104/VP0106/VP0109 060806 www.supertex.com 4 RDS(ON) (normalized) TA = 25oC RDS(ON) @ -10V, -0.5A 1.4 ID (amperes) |
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